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Behavior of Epitaxial GaN Layers on the Polyimides Polymer Substrates

EasyChair Preprint no. 4966

5 pagesDate: February 3, 2021


The present work describes the succesfully growth of epitaxial gallium nitride (GaN) layers on the polyimide polymer substrates in an Ion Beam Assisted Deposition process (IBAD), using nitrogen ions with hyperthermal energies. By applying Scanning Electron Microscopy (SEM) and Quantum Design Physical Properties Measurement System, the behaviour of hexagonal GaN thin films is investigated. The high quality of GaN layers on polymer polyimide substrates is useful to many applications esxpecially for optoelectronic devices and semiconductors devices

Keyphrases: GAN, Ion Beam Assisted Deposition, Polyimides

BibTeX entry
BibTeX does not have the right entry for preprints. This is a hack for producing the correct reference:
  author = {Sri Vidawati and Jürgen W. Gerlach and Benjamin Herold and Bernd Rauschenbach},
  title = {Behavior of Epitaxial GaN Layers  on the Polyimides Polymer Substrates},
  howpublished = {EasyChair Preprint no. 4966},

  year = {EasyChair, 2021}}
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